My project at CNRS started with Molecular Beam Epitaxy of semiconductor III-V nanowires using both catalyst-free and catalyst-induced methods. This growth understanding extends the possibility to synthesize the structures hard to be achieved in conventional films such as nanodisks and core shells. My research also covered the optical and electrical characterizations of III-V semiconductor nanowires.
In the last years, I have focused my scientific interest on piezoelectric semiconductor nanowires for flexible energy harvesters and sensors. This work is motivated by the coexistence of piezoelectric and semiconducting properties as well as the remarkable mechanical flexibility of high aspect ratio nanowires. The studies involve the investigation of physical mechanisms that play a role in the nanowire’s electromechanical properties at local and large scales. There remain several open questions to be explored to establish the description of the mechanism of piezo-potential generation in semiconductor nanowires, the influencing factors, and how to use it efficiently. The research also includes the possible use of flexible nanowire piezo harvesters in real-world applications. The fabrication process is currently developed to lift their limited integration with soft surfaces which are relevant for biomedical, wearable, and interactive electronics.
SEM of ZnO nanocolumns grown by RF magnetron sputtering
I-V characteristic and piezo-response of ZnO thin films grown at different growth temperature
The effective d33 is in the range of 3-17 pC/N
Our measurement setup
● Measure piezo-charge, piezo-voltage, and device impedance at the same position of the device, as a function of frequency
● Extract the figure of mertis (FoMs) of piezo-devices, allowing more reliable comparison between different devices
Reference
Process to fabricate vertical integrated III-Nitride nanowire nanogerators
Reference
Polymer-nanowire membrane fabrication
PDMS-nanowire membrane on paper
Selected publications
Département : PLUM
Équipe : Nanophysics and Semiconductors (NPSC)
Statut : Personnel Chercheur
Organisme : CNRS
Position : Permanent
Email : rudeesun.songmuang@neel.cnrs.fr
Téléphone : 04 76 88 10 44
Bureau : F-212