Our research group focuses on a family of semiconductors called wide bandgap (GaN and ZnO) and ultra-wide bandgap (diamond, AlN and Ga2O3). The driving force is the development of innovative electronic devices based on these materials for power electronics, light emitting devices and sensors. For this purpose, our activities include fundamental studies such as heterostructures, electron or exciton transport in nanowires, impurity centres or electron-phonon coupling and superconductivity, as well as the technological developments necessary for the fabrication of devices with tailored electronic properties, such as epitaxial growth with in-situ control, nanofabrication, impurity incorporation and gate oxide deposition.
Diamond device
Plasma image during plasma enhanced chemical vapor deposition diamond growth
Ensemble of AlN nanowires pn junction: contact and electrical measurement
Person in charge: Julien PERNOT
Students & Post-docs & CDD
Invited & Others
Etienne BUSTARRET
Personnel Chercheur - CNRS
Etienne.Bustarret@neel.cnrs.fr
Phone: 04 76 88 74 68
Office: D-422
Philippe FERRANDIS
Personnel Chercheur - UGA
philippe.ferrandis@neel.cnrs.fr
Phone: 04 76 88 74 64
Office: D-417
Etienne GHEERAERT
Personnel Chercheur - UGA
Etienne.Gheeraert@neel.cnrs.fr
Phone: 04 56 38 70 84
Office: D-309
Julien BASSALER
Personnel Chercheur - CNRS
Phone: 04 76 88 74 69
Office: D-423
Referent: Philippe FERRANDIS
Alexandre PORTIER
Personnel Chercheur - UGA
alexandre.portier@neel.cnrs.fr
Phone: 04 76 88 74 72
Office: D-315
Referent: Julien PERNOT
Pablo SAENZ DE SANTA MARIA MODRONO
Personnel Chercheur - CNRS
pablo.saenz-de-santa-maria-modrono@neel.cnrs.fr
Referent: Gwénolé JACOPIN