Semi-conducteurs à large bande interdite - SC2G (365)

Goals

Our research group focuses on a family of semiconductors called wide bandgap (GaN and ZnO) and ultra-wide bandgap (diamond, AlN and Ga₂O₃). The driving force is the development of innovative electronic devices based on these materials for power electronics, light emitting devices and sensors. For this purpose, our activities include fundamental studies such as heterostructures, electron or exciton transport in nanowires, impurity centres or electron-phonon coupling and superconductivity, as well as the technological developments necessary for the fabrication of devices with tailored electronic properties, such as epitaxial growth with in-situ control, nanofabrication, impurity incorporation and gate oxide deposition.

Diamond device

Plasma image during plasma enhanced chemical vapor deposition diamond growth

Ensemble of AlN nanowires pn junction: contact and electrical measurement

Internships & Jobs

Cathodoluminescence-based nano-thermometry

Position type: Stages Master-2 & Thèse

Contact: JACOPIN Gwénolé - 04 76 88 11 83

If temperature is one of the most basic parameters influencing any physical or chemical process, the traditional strategies to measure temperature cannot easily be applied to the nanoscale. Among the different solutions, temperature dependent luminescence properties of nano-diamonds have proven to be good contact-free temperature sensors, with a resolution only limited by the light diffraction. This technique allows to reach a spatial resolution of 500 nm at best.

In this context, the aim of this internship is to combine electron and optical microscopy techniques to develop the next generation of temperature nano-sensing (expected spatial resolution: 50 nm).

More information

All Internships & Jobs from the Institut Néel