Our research group focuses on a family of semiconductors called wide bandgap (GaN and ZnO) and ultra-wide bandgap (diamond, AlN and Ga2O3). The driving force is the development of innovative electronic devices based on these materials for power electronics, light emitting devices and sensors. For this purpose, our activities include fundamental studies such as heterostructures, electron or exciton transport in nanowires, impurity centres or electron-phonon coupling and superconductivity, as well as the technological developments necessary for the fabrication of devices with tailored electronic properties, such as epitaxial growth with in-situ control, nanofabrication, impurity incorporation and gate oxide deposition.
Diamond device
Plasma image during plasma enhanced chemical vapor deposition diamond growth
Ensemble of AlN nanowires pn junction: contact and electrical measurement
Position type: Stages Master-2 & Thèse
Contact: Pernot Julien - 0438567883
Ce stage s’inscrit dans le cadre du projet Novel AlGaN channel transistors for high voltage applications (ACTION) financé par l’Agence Nationale de la Recherche. Ce projet vise à développer et améliorer des technologies à base de GaN pour des applications dans les domaines des hautes tensions (convertisseurs d’énergie électrique).
Position type: Post-doc
Contact: Gheeraert Etienne -
The Japanese-French Research lAboratory for Semiconductor physics and Technology, J-FAST, is opening a 5-year assistant professor position at the University of Tsukuba in Prof. Gheeraert group (NEEL Institute, Grenoble, and J-FAST Tsukuba).
This international lab created in 2016 tightens collaborative scientific activities between CNRS and Université Grenoble Alpes in France, together with University of Tsukuba and Air Liquide Laboratories in Japan, in the field of pure and applied physics and materials science. More precisely it involves a core research program dedicated to fundamental physics and technology of advanced electronic and opto-electronic devices, with a particular focus on atomic scale processing physics and technology.
The assistant professor will develop a research project on wide bandgap semiconductors device technology, including atomic scale processing. He or she will be in charge of a plasma ICP etcher, and will have access to the open facility at University of Tsukuba. He or she will benefits from experts on wide bandgap semiconductor at Grenoble and Tsukuba (Ga2O3, GaN, diamond, …) and from Air Liquide expertise on gas precursors. All research projects in that context will be considered.
Person in charge: Julien PERNOT
Etienne BUSTARRET
Personnel Chercheur - CNRS
Etienne.Bustarret@neel.cnrs.fr
Phone: 04 76 88 74 68
Office: D-422
Philippe FERRANDIS
Personnel Chercheur - UGA
philippe.ferrandis@neel.cnrs.fr
Phone: 04 76 88 74 64
Office: D-417
Etienne GHEERAERT
Personnel Chercheur - UGA
Etienne.Gheeraert@neel.cnrs.fr
Phone: 04 56 38 70 84
Office: D-309
Julien BASSALER
Personnel Chercheur - CNRS
Phone: 04 76 88 74 69
Office: D-423
Referent: Philippe FERRANDIS
Claire LEONHART
Personnel Chercheur - G-INP
Phone: 04 76 88 74 72
Office: D-315
Referent: Etienne GHEERAERT
Coralie PERRIER
Personnel Chercheur - UGA
Phone: 04 76 88 74 69
Office: D-423
Referent: Philippe FERRANDIS
Marine REGNIER
Personnel Chercheur - CNRS
Phone: 04 76 88 74 69
Office: D-423
Referent: Etienne GHEERAERT
Pablo SAENZ-DE-SANTA-MARIA-MODRONO
Personnel Chercheur - CNRS
pablo.saenz-de-santa-maria-modrono@neel.cnrs.fr
Referent: Gwénolé JACOPIN
Saron Rosy SALES DE MELLO
Personnel Chercheur - UGA
saron-rosy.sales-de-mello@neel.cnrs.fr
Referent: Gwénolé JACOPIN