Our research group focuses on a family of semiconductors called wide bandgap (GaN and ZnO) and ultra-wide bandgap (diamond, AlN and Ga2O3). The driving force is the development of innovative electronic devices based on these materials for power electronics, light emitting devices and sensors. For this purpose, our activities include fundamental studies such as heterostructures, electron or exciton transport in nanowires, impurity centres or electron-phonon coupling and superconductivity, as well as the technological developments necessary for the fabrication of devices with tailored electronic properties, such as epitaxial growth with in-situ control, nanofabrication, impurity incorporation and gate oxide deposition.
Diamond device
Plasma image during plasma enhanced chemical vapor deposition diamond growth
Ensemble of AlN nanowires pn junction: contact and electrical measurement
Position type: Stages Master-2 & Thèse
Contact: Jacopin Gwénolé - 04 76 88 11 83 | -
The realization of efficient UV-C (200-280 nm) ligth emitting diodes (LEDs) is a current challenge to meet the requirements of numerous applications ranging from water, air and surface disinfection to short distance encrypted communication. However the efficiency of conventional UV-C LEDs is still low due to poor p-type doping and limited light extraction. In this context, the CEA/CNRS consortium involved in the realization of such emitters is developing a new strategy by using AlN nanowires (NWs). However, efficiency improvement now requires optimization of p-type doping, which will be the core of the present project, i.e. the growth, structural, optical and electrical characterization of p-type AlN nanowires. The growth of the structures will be performed by plasma-assisted molecular beam epitaxy in CEA-Grenoble IRIG/PHELIQS-NPSC. Electrical characterization will be made in Institut Néel following NW processing in clean room environment. The optical characterization will be made in collaboration between CEA and Institut Néel.
Position type: Stages Master-2 & Thèse
Contact: David EON -
Diamond is a semiconductor material with exceptional properties, like its high carrier mobility, excellent thermal conductivity and high breakdown voltage, which make it an ideal candidate for power electronic devices. Institut Neel is world leader in the fabrication of high-power diamond Schottky diodes and is continuously exploring ways for further improvements.
Person in charge: David EON
Students & Post-docs & CDD
Invited & Others
Etienne BUSTARRET
Personnel Chercheur - CNRS
Etienne.Bustarret@neel.cnrs.fr
Phone: 04 76 88 74 68
Office: D-422
Philippe FERRANDIS
Personnel Chercheur - UGA
philippe.ferrandis@neel.cnrs.fr
Phone: 04 76 88 74 64
Office: D-417
Etienne GHEERAERT
Personnel Chercheur - G-INP
Etienne.Gheeraert@neel.cnrs.fr
Phone: 04 56 38 70 84
Office: D-309
Wissam ALMAHMOUD ALMERHEBI
Personnel Chercheur - UGA
wissam.almahmoud-almerhebi@neel.cnrs.fr
Phone: 04 76 88 74 64
Office: D-417
Referent: Philippe FERRANDIS
Claire LEONHART
Personnel Chercheur - G-INP
Phone: 04 76 88 74 72
Office: D-315
Referent: Etienne GHEERAERT
Coralie PERRIER
Personnel Chercheur - UGA
Phone: 04 76 88 74 69
Office: D-423
Referent: Philippe FERRANDIS
Marine REGNIER
Personnel Chercheur - CNRS
Phone: 04 76 88 74 69
Office: D-423
Referent: Etienne GHEERAERT
Pablo SAENZ-DE-SANTA-MARIA-MODRONO
Personnel Chercheur - CNRS
pablo.saenz-de-santa-maria-modrono@neel.cnrs.fr
Referent: Gwénolé JACOPIN
Saron Rosy SALES DE MELLO
Personnel Chercheur - UGA
saron-rosy.sales-de-mello@neel.cnrs.fr
Referent: Gwénolé JACOPIN
Marielena VELASCO ENRIQUEZ
Personnel Chercheur - UGA
marielena.velasco-enriquez@neel.cnrs.fr
Referent: Philippe FERRANDIS
Bram VERYSER
Personnel Chercheur - CNRS
Phone: 04 76 88 74 69
Office: D-423
Referent: Philippe FERRANDIS
Corentin GUERIN
Personnel Chercheur - CEA
Office: CEA-X
Referent: Gwénolé JACOPIN