Ce stage s’inscrit dans le cadre du projet Novel AlGaN channel transistors for high voltage applications (ACTION) financé par l’Agence Nationale de la Recherche. Ce projet vise à développer et améliorer des technologies à base de GaN pour des applications dans les domaines des hautes tensions (convertisseurs d’énergie électrique).

The Japanese-French Research lAboratory for Semiconductor physics and Technology, J-FAST, is opening a 5-year assistant professor position at the University of Tsukuba in Prof. Gheeraert group (NEEL Institute, Grenoble, and J-FAST Tsukuba).

This international lab created in 2016 tightens collaborative scientific activities between CNRS and Université Grenoble Alpes in France, together with University of Tsukuba and Air Liquide Laboratories in Japan, in the field of pure and applied physics and materials science. More precisely it involves a core research program dedicated to fundamental physics and technology of advanced electronic and opto-electronic devices, with a particular focus on atomic scale processing physics and technology.

The assistant professor will develop a research project on wide bandgap semiconductors device technology, including atomic scale processing. He or she will be in charge of a plasma ICP etcher, and will have access to the open facility at University of Tsukuba. He or she will benefits from experts on wide bandgap semiconductor at Grenoble and Tsukuba (Ga₂O₃, GaN, diamond, …) and from Air Liquide expertise on gas precursors. All research projects in that context will be considered.