Titre : Traits of the Superconductor-to-Insulator Transitions in disordered NbxSi1-x and YxSi1-x thin films
Institut Néel, Salle K223 (Salle Rémy Lemaire)
Résumé : In disordered systems, the electronic ground state is the result of the competition between Coulomb interactions, disorder, which eventually leads to localization of charge carriers, and, when relevant, superconductivity. In this conflict between antagonistic forces, dimensionality plays a special role since it theoretically prevents any metallic ground state in the absence of strong electron-electron interactions.
We focus on the superconductor-to-insulator transition in two-dimensional disordered thin films, such as amorphous NbxSi1-x and YxSi1-x binary alloys. I will provide a review of our recent experiments in these systems.
