Our research group focuses on a family of semiconductors called wide bandgap (GaN and ZnO) and ultra-wide bandgap (diamond, AlN and Ga2O3). The driving force is the development of innovative electronic devices based on these materials for power electronics, light emitting devices and sensors. For this purpose, our activities include fundamental studies such as heterostructures, electron or exciton transport in nanowires, impurity centres or electron-phonon coupling and superconductivity, as well as the technological developments necessary for the fabrication of devices with tailored electronic properties, such as epitaxial growth with in-situ control, nanofabrication, impurity incorporation and gate oxide deposition.
Diamond device
Plasma image during plasma enhanced chemical vapor deposition diamond growth
Ensemble of AlN nanowires pn junction: contact and electrical measurement
Position type: Master 2 internships and theses
Contact: Pernot Julien - 0438567883
Ce stage s’inscrit dans le cadre du projet Novel AlGaN channel transistors for high voltage applications (ACTION) financé par l’Agence Nationale de la Recherche. Ce projet vise à développer et améliorer des technologies à base de GaN pour des applications dans les domaines des hautes tensions (convertisseurs d’énergie électrique).
Position type: Master 2 internships and theses
Contact: Philippe Ferrandis - 0476887464
This internship takes part of the HBV (High Breakdown Voltage) and ACTION (Novel AlGaN channel transistors for high voltage applications) projects, funded by the French agency “Agence Nationale de la Recherche”. The scope of these projects is to provide leading edge technologies in the field of III-V semiconductor compounds through the development and the improvement of AlGaN-based technologies for high voltage applications (> 1 kV). A high Al content is required to take advantage of the excellent voltage withstand of AlN. However, to achieve strong breakdown fields, material purity and technological steps have to be improved. Thus, a better knowledge of the defects introduced during manufacturing and their impact on the static and in operation performance of the devices is crucial. Control or removal of defects that act as traps will result in a reduction of the trapping effect and therefore a decrease of the leakage current, an increase of the electron mobility and a higher breakdown voltage.
Position type: Master 2 internships and theses
Contact: Philippe Ferrandis - 0476887464
Ce stage s’inscrit dans le cadre des projets HBV (High Breakdown Voltage) et ACTION (Novel AlGaN channel transistors for high voltage applications) financés par l’Agence Nationale de la Recherche. Ces projets visent à développer et améliorer des technologies à base d’AlGaN pour des applications dans le domaine des hautes tensions (> 1 kV). Une forte teneur en Al est recherchée pour bénéficier de l’excellente tenue en tension de l’AlN. Cependant, pour atteindre de forts champs de claquage et obtenir des composants résistants à de hautes tensions, des améliorations au niveau de la pureté des matériaux et des étapes technologiques sont essentielles. Ainsi, une bonne connaissance de la nature des défauts introduits pendant la fabrication et leur impact sur les performances statiques et dynamiques des composants est primordiale. Une réduction des effets de piégeage des électrons, en contrôlant ou éliminant les défauts qui agissent comme des pièges, conduira à une diminution du courant de fuite, une augmentation de la mobilité des porteurs et une tension de claquage plus élevée.
Position type: Post-doc
Contact: Gheeraert Etienne -
The Japanese-French Research lAboratory for Semiconductor physics and Technology, J-FAST, is opening a 5-year assistant professor position at the University of Tsukuba in Prof. Gheeraert group (NEEL Institute, Grenoble, and J-FAST Tsukuba).
This international lab created in 2016 tightens collaborative scientific activities between CNRS and Université Grenoble Alpes in France, together with University of Tsukuba and Air Liquide Laboratories in Japan, in the field of pure and applied physics and materials science. More precisely it involves a core research program dedicated to fundamental physics and technology of advanced electronic and opto-electronic devices, with a particular focus on atomic scale processing physics and technology.
The assistant professor will develop a research project on wide bandgap semiconductors device technology, including atomic scale processing. He or she will be in charge of a plasma ICP etcher, and will have access to the open facility at University of Tsukuba. He or she will benefits from experts on wide bandgap semiconductor at Grenoble and Tsukuba (Ga2O3, GaN, diamond, …) and from Air Liquide expertise on gas precursors. All research projects in that context will be considered.
Position type: Master 2 internships and theses
Contact: GHEERAERT Etienne - 0456387084
The demand for power electronic devices keeps increasing due to the rapid development of industries related to electricity, automotive and consumer electronics. In order to meet this demand, the use of ultra wide bandgap semiconductors such as diamond, aluminum nitride or gallium oxide (Ga2O3) has emerged as a potential avenue for development. Among these materials, β-phase Ga2O3 has many advantages, such as an large bandgap energy (4.6-4.9 eV), a particularly high breakdown voltage (» 8 MV/cm) as well as a high electron mobility (» 250 cm2/Vs). In addition, the availability of large and reasonable-cost Ga2O3 substrates makes it possible to consider this semiconductor as building block for next-generation power devices.
Person in charge: Julien PERNOT
Etienne BUSTARRET
Personnel Chercheur - CNRS
Etienne.Bustarret@neel.cnrs.fr
Phone: 04 76 88 74 68
Office: D-422
Philippe FERRANDIS
Personnel Chercheur - UGA
philippe.ferrandis@neel.cnrs.fr
Phone: 04 76 88 74 64
Office: D-417
Etienne GHEERAERT
Personnel Chercheur - UGA
Etienne.Gheeraert@neel.cnrs.fr
Phone: 04 56 38 70 84
Office: D-309
Julien BASSALER
Personnel Chercheur - CNRS
Phone: 04 76 88 74 69
Office: D-423
Referent: Philippe FERRANDIS
Claire LEONHART
Personnel Chercheur - G-INP
Phone: 04 76 88 74 72
Office: D-315
Referent: Etienne GHEERAERT
Coralie PERRIER
Personnel Chercheur - UGA
Phone: 04 76 88 74 69
Office: D-423
Referent: Philippe FERRANDIS
Marine REGNIER
Personnel Chercheur - CNRS
Phone: 04 76 88 74 69
Office: D-423
Referent: Etienne GHEERAERT
Pablo SAENZ-DE-SANTA-MARIA-MODRONO
Personnel Chercheur - CNRS
pablo.saenz-de-santa-maria-modrono@neel.cnrs.fr
Referent: Gwénolé JACOPIN
Saron Rosy SALES DE MELLO
Personnel Chercheur - UGA
saron-rosy.sales-de-mello@neel.cnrs.fr
Referent: Gwénolé JACOPIN