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Nanoscale dopant profiling of individual semiconductor wires by capacitance–voltage measurement

Developing nanoscale electrical characterization techniques adapted to three-dimensional geometry is essential for optimization of the epitaxy and doping of microwires. In this paper, we demonstrate the assessment of the depletion width as well as the doping profile at the nanoscale of individual microwire core-shell light-emitting devices by capacitance-voltage measurements. A statistical study carried out on single wires shows the consistency of the doping profile values measured for individual microwires as compared to assemblies of hundreds of wires. Finally, electron beam-induced current and secondary electrons profiles are used to validate the depletion region width and the position in the core-shell structure.

Timothée Lassiaz 1,2, Pierre Tchoulfian 1, Fabrice Donatini 2, Julien Brochet 1, Romain Parize 1, Gwénolé Jacopin 2 and Julien Pernot 2

1 Aledia, F-38130 Echirolles, France

2 Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, F-38000 Grenoble, France

Nano Lett. 2021, 21, 8, 3372–3378

DOI : 10.1021/acs.nanolett.0c04491