arnaud.claudel:Accueil - Institut Neel

Accueil

Site personnel : https://www.linkedin.com/in/arnaud-claudel-43314118

Expérience professionnelle

Depuis 2016

Ingénieur de recherche

CNRS

2014-2015

Ingénieur R&D

Fondation Nanosciences

2012-2013

Ingénieur Développement Procédés – Front-End

CEA Tech

2006-2012

Chef de projet R&D

ACERDE SAS

Cursus universitaire

2006-2009

Doctorat en Matériaux, Mécanique, Génie Civil, Electrochimie

Grenoble INP

2005-2006

Master en Science et Génie des Matériaux

INP Grenoble

2004-2005

Maîtrise en Chimie – option Chimie Inorganique

Université de Metz -> Université de Lorraine

2003-2004

Licence en Chimie

Université de Metz -> Université de Lorraine

2001-2003

DUT en Chimie

Université de Metz -> Université de Lorraine

Publications

Role of the chemical composition and structure on the electrical properties of a solid state electrolyte: Case of a highly conductive LiPON
L. Le Van-Jodin, A. Claudel, C. Secouard, F. Sabary, J-P Barnes, S. Martin
Electrochimica Acta, 259, 742 (2018)

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by High Temperature Hydride Vapor Phase Epitaxy
A. Claudel, V. Fellmann, I. Gélard, N. Coudurier, D. Sauvage, M. Balaji, E. Blanquet, R. Boichot, G. Beutier, S. Coindeau, A. Pierret, B. Attal-Trétout, S. Luca, A. Crisci, K. Baskar, M. Pons
Thin Solid Films, 573, 140 (2014)

Fabrication of a 4.4 GHz oscillator using SAW excited on epitaxial AlN grown on a Sapphire substrate
R. Salut, A. Claudel, G. Martin, D. Pique, S. Ballandras
Ultrasonics Symposium (IUS), 2013 IEEE International, p.267-270 (2014)

CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation
R. Boichot, N. Coudurier, F. Mercier, A. Claudel, N. Baccar, A. Milet, E. Blanquet, M. Pons
Theoretical Chemistry Accounts, 133, 1419 (2014)

Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer
R. Boichot, N. Coudurier, F. Mercier, S. Lay, A. Crisci, S. Coindeau, A. Claudel, E. Blanquet, M. Pons
Surface and Coating Technology, 237, 118–125 (2013)

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation
M. Pons, R. Boichot, N. Coudurier, A. Claudel, E. Blanquet, S. Lay, F. Mercier, D. Pique
Surface and Coating Technology, 230, 111-118 (2013)

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
N. Coudurier, R. Boichot, V. Fellmann, A. Claudel, E. Blanquet, A. Crisci, S. Coindeau, D. Pique, M. Pons
Physica Status Solidi C, 10 (3), 362-365 (2013)

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
M. Balaji, A. Claudel, V. Fellmann, I. Gélard, E. Blanquet, R. Boichot, A. Pierret, B. Attal-Trétout, A. Crisci, S. Coindeau, H. Roussel, D. Pique, K. Baskar, M. Pons
Journal of Alloys and Compounds, 526,103-109 (2012)

Significance of initial stages on the epitaxial growth of AlN using High Temperature Halide Chemical Vapor Deposition
M. Balaji, A. Claudel, V. Fellmann, I. Gélard, E. Blanquet, R. Boichot, S. Coindeau, H. Roussel, D. Pique, K. Baskar, M. Pons
Physica Status Solidi C, 9 (3-4),511-514 (2012)

Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using High Temperature Chemical Vapor Deposition process
A. Claudel, E. Blanquet, D. Chaussende, R. Boichot, B. Doisneau, G. Berthomé, A. Crisci, H. Mank, C. Moisson, D. Pique, M. Pons
Journal of Crystal Growth, 335 (1), 17-24 (2011)

Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by High Temperature CVD (HTCVD)
A. Claudel, Y. Chowanek, E. Blanquet, D. Chaussende, R. Boichot, A. Crisci, G. Berthomé, H. Mank, S. Luca, D. Pique, M. Pons
Physica Status Solidi C, 8 (7-8), 2019-2021 (2011)

Growth and characterization of thick polycrystalline AlN layers by High Temperature Chemical Vapor Deposition (HTCVD)
A. Claudel, E. Blanquet, D. Chaussende, R. Boichot, R. Martin, H. Mank, A. Crisci, B. Doisneau, P. Chaudouet, S. Coindeau, D. Pique, M. Pons
Journal of the Electrochemical Society, 158 (3), H328-H332 (2011)

High Temperature Chemical Vapour Deposition of AlN/W coatings on bulk SiC
F-Z Roki, M. Pons, F. Mercier, R. Boichot, C. Bernard, E. Blanquet, M. Morais, G. Huot, A. Claudel, D. Pique, Ph. Berne, S. Poissonnet, L. Chaffron
Surface and Coating Technology, 205 (5), 1302-1306 (2010)

Epitaxial and Polycrystalline Growth of AlN by High Temperature CVD: Experimental Results and Simulation
R. Boichot, A. Claudel, N.E. Baccar, A. Milet, E. Blanquet, M.Pons
Surface and Coating Technology, 205 (5), 1294-1301 (2010)

Influence of total pressure and precursors flow rates on the growth of aluminium nitride by high temperature chemical vapor deposition
A. Claudel, E. Blanquet, D. Chaussende, D. Pique and M. Pons
Physica Status Solidi C, 6 (S2), S348-S351 (2009)

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD
A. Claudel, E. Blanquet, D. Chaussende , M. Audier, D. Pique, M. Pons
Journal of Crystal Growth, 311, 3371-3379 (2009)

High-speed Growth and Characterization of Polycrystalline AlN Layers by High Temperature Chemical Vapor Deposition (HTCVD)
A. Claudel, E. Blanquet, D. Chaussende, R. Martin, D. Pique, M. Pons
EuroCVD 17 Proceedings – Part. I , ECS Transactions, 25(8), 323-326 (2009)

Influence of the N/Al ratio in the gas phase on the growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)
A. Claudel, E. Blanquet, D. Chaussende, D. Pique, M. Pons
Materials Science Forum, Vols 615-617 pp. 987-990 (2009)

Growth of thick AlN layers by High Temperature CVD (HTCVD)
A. Claudel, E. Blanquet, D. Chaussende, M. Audier, D. Pique, M. Pons
Materials Science Forum, Vols. 600-603 pp. 1269-1272 (2009)

Croissance de semi-conducteurs à grand gap
J.M. Dedulle, D. Chaussende, R. Madar, M. Pons, E. Blanquet, F. Baillet, G. Chichignoud, M. Ucar-Morais, A. Claudel
Proceeding – 18ème Congrès Français de Mécanique, CFM2007-1152 / MS