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Bernhard Klemt présente

 Manipulation électrique d’un spin d’électron unique dans une structure CMOS à l’aide d’un micro-aimant et du couplage spin-vallée

Vendredi 24 novembre 2023 à 14 h 00

Salle des séminaires – Bâtiment A – CNRS

Lien visio : https://univ-grenoble-alpes-fr.zoom.us/j/94881845221?pwd=MENOc2JEcHFvZE0yY3UyMFROQktkZz09

La présentation sera faite en anglais.


Résumé : To unveil the full power of a quantum computer, millions of interconnected qubits are necessary.
In this context, leveraging complementary metal-oxide-semiconductor (CMOS) technology seems natural.
This thesis explores intermediate solutions to bring academic semiconductor spin qubits to industrial CMOS fabrication.
First, the material properties of the substrate wafer relevant for qubit use are analyzed.
In a second step, a single electron spin qubit in a CMOS device with a micro-magnet integrated in a flexible back-end-of-line is studied.
Long spin relaxation times and coherent oscillations using electric dipole spin resonance (EDSR) are observed.
Near the so called spin-valley hotspot an enhancement in oscillation frequency is observed.
This work provides first experimental evidence for valley enhanced EDSR and demonstrates an electron spin qubit on a FD-SOI substrate for the first time.