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Bernhard Klemt presents

 Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling

Friday, November 24th 2023 at 14:00

Seminar room – Building A – CNRS

Link visio: https://univ-grenoble-alpes-fr.zoom.us/j/94881845221?pwd=MENOc2JEcHFvZE0yY3UyMFROQktkZz09

The defence will be in English.


Abstract: To unveil the full power of a quantum computer, millions of interconnected qubits are necessary.
In this context, leveraging complementary metal-oxide-semiconductor (CMOS) technology seems natural.
This thesis explores intermediate solutions to bring academic semiconductor spin qubits to industrial CMOS fabrication.
First, the material properties of the substrate wafer relevant for qubit use are analyzed.
In a second step, a single electron spin qubit in a CMOS device with a micro-magnet integrated in a flexible back-end-of-line is studied.
Long spin relaxation times and coherent oscillations using electric dipole spin resonance (EDSR) are observed.
Near the so called spin-valley hotspot an enhancement in oscillation frequency is observed.
This work provides first experimental evidence for valley enhanced EDSR and demonstrates an electron spin qubit on a FD-SOI substrate for the first time.