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Séminaire PLUM : jeudi 14 décembre 2023 à 14h00

Minh Anh Luong

Titre : Diffusion and Crystallization of N- doped Ge Rich GeSbTe Alloys:
Implications for Phase Change Memories


Institut Néel, Salle F418 (Erwin Bertaut)

Résumé : 

In recent years, phase changed memories based Ge rich Ge2Sb2Te5 alloys receive considerable interest for their high writing speed and thermal stability, suitable for automotive and embedded applications. This stability results from the fact that these alloys do not crystallize congruently but experience multiple phase separation steps upon crystallization. Several efforts have been devoted to identify these crystalline phases, which unfortunately usually reported unrealistic chemical compositions due to the phase overlapping in polycrystalline structures. In this work, using in-situ synchrotron X-ray diffraction and advanced transmission electron microscopy based technique (electron energy loss spectroscopy – EELS), we provide a detail analysis of crystallization mechanisms and phase identification on several material systems such as canonical Ge2Sb2Te5, Ge rich Ge2Sb2Te5 and their Nitrogen doping alloys. Elemental diffusion under the impacts of surrounded crystalline environment and electrical polarization within the memory cells will also be discussed.