Professor at Univ. Grenoble Alpes (France), he teaches in the Department of Electronics, Electrical Engineering, Control and Systems and carries out research at Institut Néel. Julien obtained his PhD from the University of Montpellier (France) in 2001, where he worked on the electrical transport properties of silicon carbide until 2002. In 2003, he joined the University of Nijmegen (Netherlands) as a postdoc to study defects in wide bandgap semiconductors. At the end of 2003, he was appointed associate professor at Grenoble Alpes University and the NEEL/CNRS Institute.
His current research focuses on the electrical transport properties of wide-bandgap semiconductors such as GaN and ZnO, and ultra-wide-bandgap semiconductors such as diamond, AlGaN and AlN for energy conversion and light emission applications. His main scientific contribution concerns innovative devices and electrical measurements carried out on thin films, microwires or nanowires. At university, he teaches semiconductor physics and electronics. He became a Junior Member in 2012 and a Senior Member in 2024 of the Institut Universitaire de France. He was promoted to Professor in 2016 and awarded the Blondel Medal in 2019. He is co-author of more than 100 articles and a tenth of patents. He is involved in and leads several projects. He is also involved in the organisation of several international diamond conferences and workshops, including the International Conference on Diamond and Carbon Materials (co-chair, 2017~), New Diamond and Nano Carbons (programme committee, 2016-2017 and 2024-2025), Hasselt Diamond Workshop (programme committee, 2014~), co-chair of the Franco-Japanese workshops on diamond for power electronics (2013~), and meeting chair of the 2023 MRS Fall Meeting.
CV
Julien Pernot
University Professor, Institut Néel – CNRS,
Université Grenoble Alpes
Address: Institut Néel – CNRS, 25 avenue des Martyrs, Grenoble, France
Summary
Accomplished University Professor with over 20 years of experience in semiconductor physics and electronic components. Recognized for pioneering work on electrical transport properties of ultra-wide bandgap semiconductors, such as diamond, AlGaN, and AlN, for energy conversion and light emission applications. Proven track record in research, teaching, and leadership roles, with extensive international collaborations and over 100 publications. Awarded the André Blondel Medal (2019) and twice selected as a member of the Institut Universitaire de France (Junior 2012, Senior 2024).
Research and Teaching Interests
Electrical transport properties of wide bandgap (ZnO, SiC and GaN) and ultra-wide bandgap semiconductors (diamond, AlGaN, AlN)
Innovative devices and electrical transport of thin films, microwires, and nanowires
Energy conversion and light emission applications
Semiconductor physics and electronic components and systems
Education
2010Habilitation à Diriger des Recherches, UFR PhITEM, Université Grenoble Alpes
Thesis title: “Electrical transport in doped diamond”
2001PhD in Condensed Matter Physics, Université Montpellier 2
Thesis title: “Electrical and optical properties of nitrogen-doped 4H-SiC. Application: effect sensor for high temperatures”
1998Research Master in Materials for Electronics and Ionic Solids, Université Montpellier 2
Experience
2024 – present Deputy Director of Institut Néel
Laboratory of around 500 members, focusing on innovation and partnerships
2016 – 2024 Member of the enlarged Board of Directors, UFR PhITEM
Served on the board of directors for a teaching department with 230 teachers and teacher-researchers and 40 administrative and technical staff
2017 – 2023 Head of Wide Gap Semiconductor Research Group, Institut Néel
Led a team of 15-20 researchers, including 6 permanent members
2015 – 2024 Head of “Electrical engineering control and system” Master degree
Led a team of 15 teachers/lecturer-research for a degree for more than 150 students
2016 – present University Professor, Université Grenoble Alpes – CNU 63
Taught semiconductor physics and electronic components and systems
