Fermer le menu




NanoElectronique Quantique : Mardi 4 Mai à 14h

Andreas Kuhlmann (Basel Univ.)


Zoom link : https://univ-grenoble-alpes-fr.zoom.us/j/96994398211?pwd=WDd2dkcxaWZKRHZFUGsvWTVHS0VtUT09
Meeting ID: 918 0890 1596
Passcode: neq2pm!

Title: « A spin qubit in a fin field-effect transistor above 4K »


Quantum computing’s greatest challenge is scaling up. Several decades ago, classical computers faced the same problem and a single solution emerged: very-large-scale integration using silicon. Today’s silicon chips consist of billions of field-effect transistors (FinFETs) in which current flow along the fin-shaped channel is controlled by wrap-around gates. The semiconductor industry currently employs fins of sub-10 nm width, small enough for quantum applications: at low temperature, an electron or hole can be trapped under the gate and serve as a spin qubit. An attractive benefit of silicon’s advantageous scaling properties is that quantum hardware and its classical control circuitry can be integrated in the same package. This, however, requires qubit operation at temperatures greater than 1 K where the cooling is sufficient to overcome the heat dissipation. Here, we demonstrate that a silicon FinFET is an excellent host for spin qubits that operate even above 4 K. We achieve fast electrical control of hole spins with driving frequencies up to 150 MHz and single-qubit gate fidelities at the fault-tolerance threshold. The number of spin rotations before coherence is lost at these “hot” temperatures already matches or exceeds values on hole spin qubits at mK temperatures. While our devices feature both industry compatibility and quality, they are fabricated in a flexible and agile way to accelerate their development. This work paves the way towards large-scale integration of all-electrical and ultrafast spin qubits.


PROCHAIN SÉMINAIRE : Mardi 11 mai à 14h – Martina Esposito (Institut Néel)