Our principal aim is the development of innovative photonic structures to control the spontaneous emission of embedded emitters. These researches target the realization of advanced quantum optoelectronic devices and the study of fundamental quantum optics effects.
In this context, III-arsenide semiconductors have two key assets. First, at cryogenic temperature, self-assembled InAs quantum dots are atomic-like quantum light emitters which combine appealing properties : high oscillator strength, nearly perfect radiative yield, stable and narrow emission lines. Second, the maturity of the III-As microfabrication brings a wonderful freedom for the design and realization of the electromagnetic environment of the emitter.
A PhD position is open in the group, click here for more details