Les sujets détaillés dans cette rubrique sont le dopage p au Bore, dopage n au Phosphore, dopage n au Bore-Deuterium et la gravure du diamant et cristallinité des films.
In situ monitoring of the polarization ratio at 803 nm during the periodically alternated growth of p + and non intentionally doped i diamond, separated by short H 2 flushes, leading to sample SL1. Reflectance spectra of diamond doping superlattices SL1, SL2, SL3 and SL4... > suite
One of the main issues limiting the impact of diamond in electronics is the large ionisation energy of the acceptor level (0.38 eV for B), which entails a very low carrier concentration at room temperature. Metallic diamond ([B]> 5 1020/cm3, i.e. 0.3 at.‰) does provide a high... > suite
A simple, fast and cost-effective etching technique to create oriented nanostructures such as pyramidal and cylindrical shaped nanopores in diamond was proposed. In this process, a diamond film is annealed with thin metallic layers in hydrogen atmosphere. Carbon from the diamond surface is... > suite