Photonic and opto-electronic devices

We are aiming at creating sources and detectors of light of energy ranging from the THz domain to the deep UV. For this purpose, we benefit from the large variety of materials that are grown within the group. The control of the geometry of the nanostructure allows us to realize devices compatitble with conventionnal lighting applications down to systems which are sensitive to the single photon level. HEre are a few exmaple of the devices and application we are working on:

THz source and detector using intersubband technologies

Thanks to their large conduction band offset (up to 1.75 eV for GaN/AlN), III-nitride nanostructures offer great prospects for ultrafast intersubband (ISB) devices operating at room temperature in the near-IR spectral range. NPSC has made a significant research effort on the development of a nitride ISB technology operating at 1.3 and 1.55 μm wavelength: interesting results were the development of the first ISB electro-optical modulators and quantum cascade detectors based on III-nitrides, as well as the record shortest ISB photoluminescence wavelength in semiconductors. Our present efforts focus on the measurement of electroluminescence in the far-infrared spectral range. This work will be extended to 1D structures (nanowires / nanorods), which should provide advantages in terms of both, control of the relaxation time thanks to the lateral confinement, and accessible material combinations and size of the active region thanks to the 3D elastic relaxation of misfit strain.

Lighting solution based on semiconducting nanowires

Our expertise in the growth of 1D nanowire semiconducting heterostructures, either by MBE or MOCVD, paves the way to the fabrication of light emitting diodes (LED) which are not affected by the structural defects which exist in present technolgy devices based on 2D layers. NPSC has been a major participant in the Carnot-Eclairage project, led by LETI-DOPT, and which leads to the creation of the start-up Aledia. We explored the growth of heterostructured nanowires by MBE and MOCVD and their optical characterization, and provided LETI with nanowire diode structures to be processed.

Our current efforts move now the the UV domain. We aim at developing solid-state light source emitting at wavelengths below 310nm in order to obtain a bactericidal effect. They would conveniently replace the conventional mercury vapor light tubes which are highly polluting. The team explores to different path to reach this goal: GaN/AlN quantum dots with carrier injection by field effect with the help of carbon nanotube or MBE grown nanowires made of AlxGa(1-x)N

Micro- and nanodevices

The aim of these experiment are twofold: (i) we want to understand the behavior at the most fundamental level of a semiconducting light source or detector, in close relation to quantum optics and (ii) from a more practical point of view such device could be easily interfaced to integrated optics system and are paramount in quantum communication (single photon light source). We are currently investigating LEDs or detectors made of a single nanowire grown by MOCVD, microlasers made of a photonics bangap crystals or whisperring gallery mode with the aim or developping nonlinear light source (frequency doubling or parametric radiation), or trying to couple a single quantum dot embedded in a nanowire to dielectric or plasmonic nanoantennas

Quantum coherence - CQ

Quantum coherence - CQ

Revealing quantum phenomena in electronic nano-circuits
Helium : from fundamental to applications - HELFA

Helium : from fundamental to applications - HELFA

Helium as model system, hydrodynamic and turbulence, space and astrophysics, instrumentation and cryogenic development, kinetic inductance detectors.
Magnetism and Superconductivity - MagSup

Magnetism and Superconductivity - MagSup

Team Magnetism and Superconductivity at Institut NEEL - Systems involving charge, spin or lattice degrees of freedom.
Optics and materials - OPTIMA

Optics and materials - OPTIMA

a complete chain of competences that goes from the design and elaboration of new materials to the study of nonlinear optical properties and plasmonics
Materials, Radiations, Structure - MRS

Materials, Radiations, Structure - MRS

Understanding of the physico-chemical properties of complex materials based on the precise description of their structure
Micro and NanoMagnetism - MNM

Micro and NanoMagnetism - MNM

Complementary expertise in fabrication, characterisation, and simulations for studies in nanomagnetism with applications in spin electronics and micro-systems
Quantum Nano-Electronics and Spectroscopy - QNES

Quantum Nano-Electronics and Spectroscopy - QNES

Electron transport and local spectroscopy of quantum structures
Nano-Optics and Forces - NOF

Nano-Optics and Forces - NOF

Nano - optics and forces
Nanophysics and Semiconductors - NPSC

Nanophysics and Semiconductors - NPSC

Growth of III-V and II-VI semiconductor nanostructures and their physics in search of new functions for potential applications.
Nanospintronics and Molecular Transport - NanoSpin

Nanospintronics and Molecular Transport - NanoSpin

Studying magnetism at the nanoscale, where classical and quantum properties can be combined and used for molecular quantum spintronics
Wide bandgap semiconductors - SC2G

Wide bandgap semiconductors - SC2G

Physics of diamond and other wide bandgap semiconductors towards applications in electronics and biotechnologies
Surfaces, Interfaces and Nanostructures - SIN

Surfaces, Interfaces and Nanostructures - SIN

Experimental and theoretical studies of low dimensional systems
Hybrid systems at low dimensions - HYBRID

Hybrid systems at low dimensions - HYBRID

Electronic, optical, vibrational, mechanical properties, as well as their interplay at the nanoscale, of novel hybrid systems (nanotubes, graphene, two-dimensional and functionalized materials) which are developed by the group .
Condensed Matter Theory - TMC

Condensed Matter Theory - TMC

Novel physical phenomena in materials and model systems.
Thermodynamics and Biophysics of small systems - TPS

Thermodynamics and Biophysics of small systems - TPS

Ultra-sensitive instrumentation for electrical and thermal measurements: from biophysics to low temperature condensed matter physics.
Theory of Quantum Circuits - ThQC

Theory of Quantum Circuits - ThQC

Theoretical studies of electronic transport in nanometer-scale devices showing remarkable quantum effects.
Ultra-low temperatures - UBT

Ultra-low temperatures - UBT

Quantum physics at the ultra-low temperature frontier.

Electronic transport through GaN/AlN double tunnel barriers in nanowires

Most of the researches on III-N nanowires are oriented toward light emitting devices. In order to diversify the applications of these nano-objects to nanoelectronic domain, we investigate the electron transport through III-N double tunnel barriers in nanowires. Such a study is the first important step towards a variety of novel quantum devices relying on axial quantum confinement. This work is not only valuable for III-N nanowire applications but also for understanding quantum transport in nitride material which is mostly unexplored.

GaN-based intersubband optoelectronics for THz devices

III-nitride semiconductors have launched the first optoelectronic revolution of the XXI century with the advent of solid-state blue lasers (Blue-ray) and LED lighting (mercury-free lamps, outdoor full-color screens, LED TV). On the other hand, the reduction of semiconductor dimensionality to the nanoscale has paved the way to the fabrication of optoelectronic devices whose color is not determined by the semiconductor band gap but by the geometrical design. Night-vision QWIP cameras or quantum cascade lasers are examples of devices exploiting quantum phenomena in low-dimensional nanostructures using classical compound semiconductors (arsenides, phosphides). The application of these principles to III-nitrides set the basis for a new technology to cover the infrared (IR) spectrum, from the fiber-optic telecom wavelengths (near IR) to the THz band (far IR), spectral domain that is relevant for non-invasive medical diagnosis, pollution monitoring and detection of a variety of pharmaceutical chemicals, explosives or bio-agents.

III-N Heterostructures for Device Applications

People : Edith Bellet-Amalric, Eirini Sarigiannidou, and Eva Monroy Fabien Guillot, Sylvain Leconte Overview and results : III-nitride semiconductors (GaN, AlN, InN) are currently the materials of choice for optoelectronic devices in the green to UV spectral region. A new prospect for... > suite

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