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Séminaire MCBT

Jeudi 17 mai à 11h00,
Salle Louis Weil, E424

Orateur : Sebastian C. Peter (Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore)
"Topological Insulator Behaviour in Heavy Metal based Ternary Chalcogenides"


Topological insulators (TI) are fascinating quantum materials which are characterized by an insulating bulk and a conducting surface. The topological surface state is protected by time reversal symmetry and it is robust against scattering from non-magnetic scattering. They are expected to be useful for various applications including high frequency electronics, transparent electrodes, spintronics, and quantum computations. Already there are a number of bulk materials such as Bi2Te3, Bi2Se3, Sb2Te3, TlBiS2, TlBiSe2, Bi2Te2Se, Bi2Se2Te, TlBiTe2, PbBi2Se4, and PbBi2Te4 have been reported as TIs both theoretically as well as experimentally. These compounds are basically narrow-gap semiconductors composed of heavy elements, which cause band inversion. In this talk I highlight the topological behavior of the compounds InTe, TlTe2 and Sb2S3 using pressure dependent X-ray diffraction, transport and Raman spectrocscopy measurements. Prelimiary investogations on many other compounds also will be discussed.


V. Rajaji, K. Pal, S. C. Sarma, B. Joesph, S. C. Peter, U. V. Waghmare and C. Narayana, Pressure induced band inversion, electronic and structural phase transitions in InTe : A combined experimental and theoretical study, Phys. Rev. B 97, 155158 (2018).
V. Rajaji, U. Dutta, P. C. Sreeparvathy, S. C. Sarma, Y. A. Sorb, B. Joseph, S. Sahoo, S. C. Peter, V. Kanchana, C. Narayana and , Structural, vibrational, and electrical properties of 1T−TiTe2 under hydrostatic pressure : Experiments and theory, Phys. Rev. B 97, 085107 (2018).
Y. Sorb, V. Rajaji, P. Malavi, U. Subbarao, P. Halappa, S. Karmakar, S. C. Peter and C. Narayana, Pressure induced electronic topological transition in Sb2S3, J. Phys. Condens. Matter 28 , 015602 (2016).

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