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Soutenance de thèse

Mercredi 15 mars à 13h00,
Salle des séminaires, Bât. A

Oratrice : Zhihua FANG
"n and p-type doping of GaN nanowires : from growth to electrical properties’’

Abstract

III-nitride nanostructures have been attracting increasing attention due to their peculiar properties and potential device applications as lighting LEDs. The control and evaluation of the doping in the nanostructures is a crucial, yet challenging issue. This thesis advances the field by exploring the n and p type doping process of GaN nanowires (NWs) grown by molecular beam epitaxy (MBE). In particular, their electrical properties have been revealed through a multi-technique approach at the single NW level. This original study provides a nanoscale description of the electrical and doping properties of the GaN NWs, facilitating the fabrication of the future GaN nanostructures based devices.

Key words : molecular beam epitaxy, GaN, nanowires, n and p-type doping, axial p-n junction, electron beam induced current.

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