Accueil du site Séminaires Séminaire MCBT

Séminaire MCBT

Mardi 7 février à 11h00,
salle Louis Weil, E424

Orateur : Christoforos Theodorou (IMEP-LAHC)
"Low-frequency noise phenomena in advanced nano-scale electronic devices"


The transistor gate oxide surface miniaturization towards the nanometer scale, the use of new semiconductor or insulator materials, as well as the complex manufacturing process steps, can dramatically increase the device low-frequency noise (LFN) levels. Added to that, individual trapping phenomena can cause the manifestation of high-amplitude random telegraph noise (RTN). On the bright side, LFN and RTN can be used as powerful non-destructive tools for interface quality characterization and trap localization, as well as for sensing purposes.

Dans la même rubrique

© Institut Néel 2012 l Webdesign l Propulsé par spip l Dernière mise à jour : mercredi 10 juin 2020 l