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Soutenance de thèse

Jeudi 25 juin à 14h00,
Salle des séminaires, bât. A

Orateur : Dipankar Kalita
"Graphene produced by CVD : from control and understanding of atomic scale defects to production of macroscale functional devices"


Though graphene is strong candidate to make various applications, still there are issues that need to be resolved. The purpose of this thesis is to grow high quality graphene and transfer it to make new graphene based devices and to engineer defects into graphene structure. We have been able to increase the growth polycrystalline monolayer graphene from few centimeter scale to wafer scale without changing the CVD chamber. At the same time, we have demonstrated a method to decrease the nucleation density which allows us to grow large single crystal graphene from few to hundreds of micrometer.

Concerning new design of graphene based devices, the polycrystalline graphene was transferred to create artificial bilayer crossbars where the bilayer region behaved like naturally grown bilayer graphene. We have also developed a novel method of suspending graphene in macroscopic scale in pillared surface. In such a system, the strain in graphene is found to be less than 0.2%. Thereafter a completely dry method of depositing electrodes was developed which prevents damaging of graphene. The scale and process of transferring graphene was improved to different substrates such as 4 inch Si and sapphire substrates. It was used as transparent electrode to in a quantum well LED to replace the Ni/Au electrodes.

We have been able to engineer defects into graphene. Firstly defects were induced in a controllable way using chemical method and were analyzed using Raman spectroscopy and Transmission Electron Microscopy which revealed a two step mechanism of defect formation in the graphene structure. We have also studied the effect of charged defects which adsorb onto the graphene surface without forming bonds with it. Unlike in literature where charged particles were deposited onto graphene, here the charged nano particles were present during the growth process in the copper foil. We believe that due to these nano particles, the intensity of D’ phonon is greatly enhanced. Such anomalously higher intensity of D’ band compared to D band has not been reported before. .

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