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Séminaire NANO

Jeudi 21 mai à 9H30,
Salle Remy Lemaire, K223

Orateur : David Eon (SC2G)
"In situ ellipsometry technic for diamond growth to high performance power devices"

Abstract

Diamond has a relatively wide bandgap but it can be made into a semiconductor, or even a metal, by doping it with impurity atoms. Semiconducting diamond layers, grown epitaxially on diamond substrates, have outstanding electrical and thermal properties in view of high power applications. Diamond high power devices are now being intensively investigated. In particular, Schottky diodes based on a metal/diamond junction appear very promising.

Basic homoepitaxial diamond growth studies as well as those focused on the fabrication of diamond based unipolar devices would strongly benefit from an in situ diagnosis tool probing the growing surface. Ideally, this probe should be adaptable to most of the Microwave Plasma Enhanced Chemical Vapor Deposition (MPCVD) reactors. We have shown recently that ex situ spectroscopic ellipsometry was a powerful non-destructive method to characterise heavily doped metallic (p++) as well as non-intentionally doped (p-) diamond epilayers, and multilayers such as those involved in pseudo-vertical Schottky diodes or delta-doped structures. We report here in situ ellipsometric studies carried out on such epilayers during MPCVD.

Following growth, Schottky diodes are defined and electrical characterisations are performed. The performances reported for diamond diodes confirm the potential of diamond for high power electronics applications.

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