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Séminaire NANO

Mardi 24 mars 2015 9h30,
salle Remy Lemaire, K223

Orateur : Hitoshi UMEZAWA (AIST et Chaire LANEF)
"Diamond Semiconductor Devices for Future Electronics"

Abstract :

Diamond is one of the promising materials for future electronic devices because of its excellent material properties such as wide bandgap, high electron/hole mobility, high breakdown field, highest thermal conductivity and so on. Up to now, high performance devices such as high frequency FETs, high voltage/high current devices and high temperature devices with radiation hardness have been reported on single crystal diamond. In this seminar, I will introduce the recent progress on diamond wafer technology and semiconductor devices from the view point of industrial applications.

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