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Séminaire MCBT

Mardi 26 mars 2013 à 11h00,
Salle Louis Weil, E424

Orateur : M. Tran (Université de Genève)
" Optical infrared study of BiTeI under high pressure"

Abstract :

This talk will cover a brief introduction to infrared spectroscopy followed by an overview of some major features of BiTeI - a semiconductor with giant Rashba splitting [1] which was predicted to turn into a topological insulator under the application of high pressure [2]. Since the band gap is expected to close and then re-open above a critical pressure, infrared spectroscopy under pressure seems to be a technique of choice to investigate such a transition. I will then give a description of the high pressure technique in infrared used at the Swiss Light Source [3], and present data obtained in reflectivity and transmission. These data show a strong pressure dependence and indicate a change of behavior above 9-10 GPa. This suggests a different ground state for the high pressure phase of this compound.

[1] K. Ishizaka et al., Giant Rashba-type spin splitting in bulk BiTeI, Nature Materials 10, 521 (2011)
[2] B.-J. Yang et al, Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure, Nature Communications 3, 679 (2012)
[3] Lerch Ph et al., IR beamline at the Swiss Light Source, J. Phys. : Conf. Ser. 359 012003 (2012)

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