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Jeudi 13 décembre à 14H00
Salle de conférence, Bât. A
"Systèmes nanoélectroniques hybrides : Cartographies de la densité d’états locale"
Orateur : Sylvain Martin

Abstract :

At vanishing charge carrier density, graphene devices exhibit spatial doping inhomogeneities, the so-called electron-hole puddles. These prevent testing fundamental properties in graphene such as the value of its minimum conductivity and a Mott insulator transition. Charged impurities trapped between graphene and its dielectric support as well as the local graphene curvature have both been incriminated as the origin of the puddles. Here we demonstrate by STM, the existence of puddles in graphene weakly coupled to a metallic substrate and show these to be related to the variations of the graphene-substrate distance. In this regime of completely substrate screened electron-electron interactions, we observe interferences of Dirac fermions.

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