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Séminaire MCBT "Disorder-induced Superconductor-to-Insulator Transition : three approaches"

Mardi 12 Juin à 11 heures, Salle Louis Weil, E424, bat E 3ème étage

Claire Marrache-Kikuchi, CSNSM, Orsay

Disorder-induced Superconductor-to-Insulator Transition : three approaches

We report on the study of the Superconductor-to-Insulator Transition (SIT) in NbxSi1-x thin films induced by three different parameters, all related to the amount of disorder in the films : the Nb composition, the thickness and the annealing temperature. The annealing of the films does not modify their microscopic structure but slightly changes the quantum interference patterns. Our results show that the effect of the thickness on the destruction of superconductivity is very distinct from those of the composition or the annealing. The exact mechanism by which the disorder induces a SIT has thus yet to be understood.

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