A quantum dot in a nanowire : GaN/AlN, CdSe/ZnSe, ...

We have developed the growth techniques for semiconductor nanowires based on different material systems such as III-N (InN, GaN, AlN], II-VI(,CdSe,ZnSe) and III-As (InAs, GaAs, AlAs). Currently, these nanowires have demonstrated single photon operation respectively in the UV and in the visible. Quantum transport experiments through tunnelling barriers based on GaN/AlN nanowires are also thoroughly investigated. In addition, we start also the research activities on selective area growth of III-N and III-As nanowires.

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