GAYRAL Bruno

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 GAYRAL Bruno

 

E-mail : bruno.gayral (at) cea.fr
Phone : +33 (0) 4 38 78 26 73
Fax : +33 (0) 4 38 78 51 97
 
Postal address :
CEA-Grenoble
INAC/PHELIQS
17 rue des Martyrs
Fr-38054 Grenoble, Cedex 9

 
 

 

Research activities :

My full CV can be found here.  

I have been a researcher at CEA-Grenoble INAC in the Nanophysics and Semiconductor group since november 2003.

My current research deals mainly with experimental investigation of the optical properties of GaN/AlN nanostructures. The goal is to explore fundamental electronic properties of AlGaN based heterostructures. One way to do this is to perform spatially-resolved photoluminescence on single objects (e.g. quantum dots or nanowires).
I am also interested in the fundamental physics of light-matter coupling in semiconductor microcavities.
 
I am currently coordinating one ANR national project (2014-2017) :
QUANONIC deals with fabrication and optical study of III-N based microcavities (microdisks, photonic crystals) with the goal of demonstrating microlasers, Purcell effect, strong coupling and enhanced non-linear effects in III-N structures.
 

Publications :

A list of my publications can be found here
 
My PhD thesis entitled Controlling spontaneous emission dynamics in semiconductor microcavities : an experimental approach was published by the french “Annales de Physique”
Copyright (2001) by EDP Science

 

Some recent publications :
 

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, M. Mexis, F. Semond and P. Boucaud, “Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon”, Appl. Phys. Lett. vol. 106, 081105 (2015)
Copyright (2015) by the American Institute of Physics
 

I. Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, M. El Kurdi, A. Ghrib, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond and P. Boucaud, “Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon”, Appl. Phys. Lett. vol. 105, 011104 (2014)
Copyright (2014) by the American Institute of Physics
 

G. Nogues, T. Auzelle, M. den Hertog, B. Gayral and B. Daudin, “Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires”, Appl. Phys. Lett. vol. 104, 102102 (2014)
Copyright (2014) by the American Institute of Physics
 

C. Brimont, T. Guillet, S. Rousset, D. Néel, X. Checoury, S. David, P. Boucaud, D. Sam-Giao, B. Gayral, M. J. Rashid and F. Semond, “Imaging of photonic modes in an AlN-based photonic crystal probed by an ultra-violet internal light source”, Opt. Lett. vol. 38, 5059 (2013)
Copyright (2013) by the Optical Society of America
 

D. Sam-Giao, R. Mata, G. Tourbot, J. Renard, A. Wysmolek, B. Daudin and B. Gayral,“Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires”, J. Appl. Phys. vol. 113, 043102 (2013)
Copyright (2013) by the American Institute of Physics
 

C. Leclere, V. Fellmann, C. Bougerol, D. Cooper, B. Gayral, M. G. Proietti, H. Renevier and B. Daudin, “Strain assisted inter-diffusion in GaN/AlN quantum dots”, J. Appl. Phys. vol. 113, 034311 (2013)
Copyright (2013) by the American Institute of Physics
 

D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M. J. Rashid, F. Semond, J. Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury and P. Boucaud, “High quality factor AlN nanocavities embedded in a photonic crystal waveguide”, Appl. Phys. Lett., vol. 100, 191104 (2012)
Copyright (2012) by the American Institute of Physics
 

G. Tourbot, C. Bougerol, F. Glas, L.F. Zagonel, Z. Mahfoud, S. Meuret, P. Gilet, M. Kociak, B. Gayral and B. Daudin, “Growth mechanism and properties of InGaN insertions in GaN nanowires”, Nanotechnology, vol. 23, 135703 (2012)
Copyright (2012) by the Institute of Physics
 

X. J. Chen, B. Gayral, D. Sam-Giao, C. Bougerol, C. Durand and J. Eymery,“Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy”, Appl. Phys. Lett., vol. 99, 251910 (2011)
Copyright (2011) by the American Institute of Physics
 

A. Balocchi, J. Renard, C. T. Nguyen, B. Gayral, T. Amand, H. Mariette, B. Daudin, G. Tourbot and X. Marie, “Temperature-insensitive optical alignment of the exciton in nanowire-embedded GaN quantum dots”, Phys. Rev. B, vol. 84, 235310 (2011)
Copyright (2011) by the American Physical Society
 

A.-L. Bavencove, G. Tourbot, J. Garcia, Y. Désières, P. Gilet, F. Levy, B. André, B. Gayral, B. Daudin and Le Si Dang, “Submicrometre resolved optical characterization of green nanowire-based light emitting diodes”, Nanotechnology, vol. 22, 345705 (2011)
Copyright (2011) by the American Institute of Physics
 

D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury and P. Boucaud, “AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate”, Appl. Phys. Lett., vol. 98, 261106 (2011)
Copyright (2011) by the American Institute of Physics
 

V. Fellmann, P. Jaffrennou, D. Sam-Giao, B. Gayral, K. Lorenz, E. Alves and B. Daudin, “Ternary AlGaN alloys with high Al content and enhanced compositional homogeneity grown by plasma-assisted molecular beam epitaxy”, Jpn. J. Appl. Phys., vol. 50, 031001 (2011)
Copyright (2011) by the Japan Society of Applied Physics
 

G. Tourbot, C. Bougerol, A. Grenier, M. Den Hertog, D. Sam-Giao, D. Cooper, P. Gilet, B. Gayral and B. Daudin, “Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE”, Nanotechnology vol. 22, 075601 (2011)
Copyright (2011) by the Institute of Physics
 

J. Renard, G. Tourbot, D. Sam-Giao, C. Bougerol, B. Daudin and B. Gayral, “Optical spectroscopy of cubic GaN nanowires”, Appl. Phys. Lett., vol. 97, 081910 (2010)
Copyright (2010) by the American Institute of Physics
 

J. Renard, R. Songmuang, G. Tourbot, C. Bougerol, B. Daudin and B. Gayral,“Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires”, Phys. Rev. B, vol. 80, 121305(R) (2009)
Copyright (2009) by the American Physical Society
 

J. Renard, P. K. Kandaswami, E. Monroy and B. Gayral, “Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots”, Appl. Phys. Lett., vol. 95, 131903 (2009)
Copyright (2009) by the American Institute of Physics
 

B. Gayral and J.-M. Gérard, “Photoluminescence experiment on quantum dots embedded in a large Purcell-factor microcavity”, Phys. Rev. B vol. 78, 235306 (2008)
Copyright (2008) by the American Physical Society
 

J. Renard, B. Amstatt, C. Bougerol, E. Bellet-Amalric, B. Daudin and B. Gayral, “Optical properties of m-plane GaN quantum dots and quantum wires”, J. Appl. Phys. vol. 104, 103528 (2008)
Copyright (2008) by the American Institute of Physics
 

L. Lahourcade, P. K. Kandaswamy, J. Renard, P. Ruterana, H. Machhadani, M. Tchernycheva, F. H. Julien, B. Gayral and E. Monroy, “Interband and intersubband optical characterization of semipolar (11-22)-oriented GaN/AlN multiple-quantum-well structures”, Appl. Phys. Lett., vol. 93, 111906 (2008)
Copyright (2008) by the American Institute of Physics
 

J. Renard, R. Songmuang, C. Bougerol, B. Daudin and B. Gayral, “Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires”, Nano Letters vol. 8, 2092 (2008)
Copyright (2008) by the American Chemical Society
 

M. Tchernycheva, C. Sartel, G. Cirlin, L. Travers, G. Patriarche, J.-C. Harmand, Le Si Dang, J. Renard, B. Gayral, L. Nevou and F. Julien “Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy : structural and optical characterization”, Nanotechnology, vol. 18, 385306 (2007)
Copyright (2007) by the Institute Of Physics
 

F. Rol, S. Founta, H. Mariette, B. Daudin, Le Si Dang, J. Bleuse, D. Peyrade, J.-M. Gérard and B. Gayral, “Probing exciton localization in nonpolar GaN/AlN quantum dots by single-dot optical spectroscopy”, Phys. Rev. B vol. 75 125306 (2007)
Copyright (2007) by the American Physical Society  
 
 
 

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