Actualités


Resumption of activities at Institut Néel

The resumption of activities on the site is facilitated since June 22nd, in compliance with the rules of physical distance and other barrier gestures in force at the laboratory.
Good resumption !

Reprise d’activités à l’Institut Néel

La reprise d’activités sur le site est facilitée depuis le 22 juin 2020, dans le respect des règles de distanciation physique et des autres gestes barrières en vigueur au laboratoire.
Bonne reprise à toutes et tous !

Un Prix "Dominique Givord" a été décerné par l’European Magnetism Association !

En 2019, l’Association européenne du magnétisme (EMA) a créé deux prix : le prix "Young Scientist" décerné chaque année, et le prix "Dominique Givord" décerné tous les 3 ans, pour honorer les avancées du magnétisme en Europe.
Wolfgang Wernsdorfer (KIT) est le premier lauréat à recevoir ce prix... La suite ici.

Publications récentes

Epsilon iron as a spin-smectic state

PNAS, October 8, 2019 116 (41) 20280-20285 Pdf

Observation of quantum many-body effects due to zero point fluctuations in superconducting circuits

Nature Communications, November 20, 10, 5259 (2019) Pdf

Faits marquants

Simulating Surface Resonant X-Ray Diffraction

The technique called Surface Resonant X-ray Diffraction is a powerful tool for characterizing an ultra-thin film on a surface or an electro-chemical interface. It probes the crystallographic structure of such surface systems by recording 2-Dimensional diffraction peaks at fixed X-Ray energy. Also, one can probe the electronic structure around selected atoms by recording the absorption of X-Rays as a function of their energy, especially at resonance with the binding energy of the atoms’ core electrons. However, the interpretation of the X-Ray data requires development of sophisticated ab initio theoretical methods that can create simulated spectra to be compared with the experimental spectra. Full text.

A tool for “smart“ projection-photolithography

The NEEL Institute’s research work has created a vital need for fabrication "in house" of highly specialized microelectronics devices. These include silicon devices such as diodes, p-n and field-effect transistors, etc, for use in a wide variety of experiments. These devices are fabricated on demand by depositing different materials (e.g. metal leads, contacts, electrodes, ...) on the silicon wafer and performing oxidations and other processes, often in very complex geometric patterns. Full text.


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